CoE 197U

• Introduction to Analog and Digital Integrated Circuit Design
• Semester Offered: 2nd semester
• Course Credit: Lecture: 3 units (2 units lecture, 1 unit lab)

Catalog Description

IC Fabrication. CMOS gates. Logical Effort. Interconnect. Memory Elements. MOS Amplifiers. Current Sources. Differential Amplifiers. Operational Transconductance Amplifiers. Pre-req: EEE 41 or EEE 131. 5h (2 lec, 3 lab) 3 u.

Syllabus

Module	Topics	Outcomes	Resources	Activities
Part I: Digital Integrated Circuits
1	Introduction IC Fabrication Scaling	Identify the key characteristics and non-idealities of a CMOS fabrication process. Analyze how these key characteristics and non-idealities change the characteristics of the devices that will be built on it.	Video: Silicon Run I (1996) Youtube link Paolo Gargini's presentation from the 2015 International Technology Roadmap for Semiconductors (ITRS) Summer Meeting.	CoE197U-A1.1: IC Fabrication and Scaling Lab 00: Introduction to LTspice
2	The MOS Transistor The MOS Switch The CMOS Inverter	Simplify the analysis of a CMOS inverter using switch-level transistor models. Determine key CMOS inverter metrics and understand their significance in the analysis and design process.		Lab 01: The MOSFET Switch and The Inverter
3	Static CMOS Gates Logical Effort and Delay	Design CMOS static gates Estimate delays of cascaded logic gates Design multistage networks for optimal speed	Slides: CMOS Gates PDF Slides: Logical Effort PDF	CoE197U-A3.1: Logical Effort Lab 02: Inverter Characteristics, Ring Oscillator, and Buffers
4	Power and Energy Interconnects	Identify sources of power and energy consumption in digital circuits Evaluate energy efficient techniques for digital logic using defined metrics Model interconnects as parasitic resistances and capacitances and estimate corresponding delay	Slides: Power and Energy PDF Slides: Interconnects PDF	Lab 03 : Static Logic Gates and Power-Delay Product
5	Memory Elements Timing	Enumerate and distinguish different memory element classifications Identify timing parameters relevant to memory elements and their effects on sequential circuit timing Design and characterize basic memory elements	Slides: Memory PDF Slides: Timing PDF	CoE197U-A5.1: Timing Lab 04 : Basic Memory Devices
Part II: Analog Integrated Circuits
6	MOS Amplifiers: DC and AC Analysis	Determine the DC operating point of MOS amplifiers. Extract the MOS small-signal parameters depending on the DC operating point. Analyze MOS amplifiers in the AC and DC domain. Derive the two-port network representation of MOS amplifiers. Identify the appropriate application of a MOS amplifier topology based on its two-port parameters.	Slides: DC and AC Analysis PDF Videos: Part 1 Part 2
7	MOS Amplifiers: Frequency Response	Analyze MOS amplifiers in the frequency domain. Sketch the Bode plots of the transfer function. Estimate the dominant pole using ZVTCA.	Slides: Frequency Response PDF Videos: [ Part 1] [ Part 2] [ Part 3]
8	Current Sources High-Swing Current Sources	Understand ideal and real sources Analyze MOS simple current mirror Analyze High-swing current sources	Slides: Current Sources PDF Slides: High-Swing Current Sources PDF
9	MOS Differential Pairs Two-Stage MOS OTA	Understand differential circuits Analyze MOS differential pairs Understand operational amplifier operation Analyze Miller Operational Amplifiers	Slides: MOS Differential Pairs PDF Slides: Miller Op-Amp PDF
10	Folded Cascode Operational Transconductance Amplifiers	Identify the different stages in a folded cascode OTA. Determine the components and/or parameters that affect the DC operating point of a folded cascode OTA. Explain how to design a folded cascode OTA.	Slides: Folded Cascode PDF

References

• Rabaey, Chandrakasan, Nikolic, Digital Integrated Circuits, 2ed., Pearson 2002.
• Gray, Hurst, Lewis, Meyer, Analysis & Design of Analog Integrated Circuits, Wiley 2001.
• Johns, Martin, Analog Integrated Circuit Design, Wiley 1997.
• Design of Analog CMOS Integrated Circuits, Behzad Razavi, McGraw-Hill, 2000.
• R. Jacob Baker, Circuit Design, Layout,and Simulation, 4ed., IEEE Press 2019.