MOS Transistors

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Analog circuits are generally sensitive to the nuances and details of transistor behavior, requiring precise and/or well-controlled voltages, currents, etc. Digital circuits, on the other hand, can have much larger margins of error due to their inherent noise margins and regenerative properties. Thus, we want to be able to model these nuances and details of transistor behavior in order to predict their effects on our circuits.

Transistor Models

Transistor models enable us to describe and predict the behavior of the circuits we build using these transistors by:

  • Providing us with a window into the physical device characteristics (e.g. dimensions, material and device properties, etc.) and processes (e.g. drift/diffusion currents, tunneling, charge transfer, etc.), and
  • Allowing us to perform easy to do "experiments" using simulators such as SPICE[1].

Levels of Abstraction

References