Difference between revisions of "Passive Matching Networks"
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== Device Quality Factor == | == Device Quality Factor == | ||
− | The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as <math>\tfrac{1}{A + jB}</math> | + | The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as |
+ | |||
+ | {{NumBlk|::|<math>Y\,\mathrm{or}\,Z=\tfrac{1}{A + jB}</math>|{{EquationRef|1}}}} | ||
+ | |||
+ | The quality factor can then be expressed as | ||
+ | |||
+ | {{NumBlk|::|<math>Q=\tfrac{B}{A}</math>|{{EquationRef|2}}}} | ||
+ | |||
+ | The imaginary component, <math>B</math> represents the energy storage element, and the real component, <math>A</math>, represents the loss (resistive) component. | ||
=== Series RC Circuit === | === Series RC Circuit === | ||
A lossy capacitor can be modeled as a series RC circuit with the series resistance, <math>R_S</math> could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as | A lossy capacitor can be modeled as a series RC circuit with the series resistance, <math>R_S</math> could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as | ||
− | {{NumBlk|::|<math>Y =\tfrac{1}{R_S+j\tfrac{1}{\omega C}}</math>|{{EquationRef| | + | {{NumBlk|::|<math>Y =\tfrac{1}{R_S+j\tfrac{1}{\omega C}}</math>|{{EquationRef|3}}}} |
We get therefore write the quality factor as: | We get therefore write the quality factor as: | ||
− | {{NumBlk|::|<math>Q = \frac{\frac{1}{\omega C}}{R_S}=\frac{1}{\omega R_S C}</math>|{{EquationRef| | + | {{NumBlk|::|<math>Q = \frac{\frac{1}{\omega C}}{R_S}=\frac{1}{\omega R_S C}</math>|{{EquationRef|4}}}} |
Note that for the lossless case, <math>R_S=0</math>, leading to <math>Q_{\mathrm{ideal}} \rightarrow \infty</math>. | Note that for the lossless case, <math>R_S=0</math>, leading to <math>Q_{\mathrm{ideal}} \rightarrow \infty</math>. |
Revision as of 17:53, 1 September 2020
Controlling impedances in RF circuits are essential to maximize power transfer between blocks and to reduce reflections caused by impedance discontinuities along a signal path. In this module, we will define the quality factor, Q, for a device or a circuit, and use this Q to build circuits that modify the impedance seen across a port.
Contents
Device Quality Factor
The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as
-
(1)
-
The quality factor can then be expressed as
-
(2)
-
The imaginary component, represents the energy storage element, and the real component, , represents the loss (resistive) component.
Series RC Circuit
A lossy capacitor can be modeled as a series RC circuit with the series resistance, could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as
-
(3)
-
We get therefore write the quality factor as:
-
(4)
-
Note that for the lossless case, , leading to .