Difference between revisions of "Passive Matching Networks"

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== Device Quality Factor ==
 
== Device Quality Factor ==
The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as <math>\tfrac{1}{A + jB}</math>, the quality factor can then be expressed as <math>Q=\tfrac{B}{A}</math>. The imaginary component, <math>B</math> represents the energy storage element, and the real component, <math>A</math>, represents the loss (resistive) component.  
+
The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as  
 +
 
 +
{{NumBlk|::|<math>Y\,\mathrm{or}\,Z=\tfrac{1}{A + jB}</math>|{{EquationRef|1}}}}
 +
 
 +
The quality factor can then be expressed as  
 +
 
 +
{{NumBlk|::|<math>Q=\tfrac{B}{A}</math>|{{EquationRef|2}}}}
 +
 
 +
The imaginary component, <math>B</math> represents the energy storage element, and the real component, <math>A</math>, represents the loss (resistive) component.  
  
 
=== Series RC Circuit ===
 
=== Series RC Circuit ===
 
A lossy capacitor can be modeled as a series RC circuit with the series resistance, <math>R_S</math> could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as  
 
A lossy capacitor can be modeled as a series RC circuit with the series resistance, <math>R_S</math> could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as  
  
{{NumBlk|::|<math>Y =\tfrac{1}{R_S+j\tfrac{1}{\omega C}}</math>|{{EquationRef|1}}}}
+
{{NumBlk|::|<math>Y =\tfrac{1}{R_S+j\tfrac{1}{\omega C}}</math>|{{EquationRef|3}}}}
 
   
 
   
 
We get therefore write the quality factor as:
 
We get therefore write the quality factor as:
  
{{NumBlk|::|<math>Q = \frac{\frac{1}{\omega C}}{R_S}=\frac{1}{\omega R_S C}</math>|{{EquationRef|2}}}}
+
{{NumBlk|::|<math>Q = \frac{\frac{1}{\omega C}}{R_S}=\frac{1}{\omega R_S C}</math>|{{EquationRef|4}}}}
  
 
Note that for the lossless case, <math>R_S=0</math>, leading to <math>Q_{\mathrm{ideal}} \rightarrow \infty</math>.
 
Note that for the lossless case, <math>R_S=0</math>, leading to <math>Q_{\mathrm{ideal}} \rightarrow \infty</math>.

Revision as of 17:53, 1 September 2020

Controlling impedances in RF circuits are essential to maximize power transfer between blocks and to reduce reflections caused by impedance discontinuities along a signal path. In this module, we will define the quality factor, Q, for a device or a circuit, and use this Q to build circuits that modify the impedance seen across a port.

Device Quality Factor

The quality factor, Q, is a measure of how good a device is at storing energy. Thus, the lower the losses, the higher the Q. In general, if we can express the impedance or admittance of a device as

 

 

 

 

(1)

The quality factor can then be expressed as

 

 

 

 

(2)

The imaginary component, represents the energy storage element, and the real component, , represents the loss (resistive) component.

Series RC Circuit

A lossy capacitor can be modeled as a series RC circuit with the series resistance, could represent the series loss due to interconnect resistances. Thus, the admittance of the lossy capacitor can be expressed as

 

 

 

 

(3)

We get therefore write the quality factor as:

 

 

 

 

(4)

Note that for the lossless case, , leading to .

Series-Parallel Conversions

Basic Matching Networks

Loss in Matching Networks

T and Pi Matching Networks