Difference between revisions of "MOS Transistors"
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=== Levels of Abstraction === | === Levels of Abstraction === | ||
| + | The complexity of transistor models can range from very simple models, such as modeling the transistor as a simple controlled switch, to very complex models such as BSIM<ref>BSIM ((Berkeley Short-channel IGFET Model)) https://bsim.berkeley.edu/</ref> models with hundreds of parameters. | ||
== References == | == References == | ||
<references /> | <references /> | ||
Revision as of 11:27, 14 August 2020
Analog circuits are generally sensitive to the nuances and details of transistor behavior, requiring precise and/or well-controlled voltages, currents, etc. Digital circuits, on the other hand, can have much larger margins of error due to their inherent noise margins and regenerative properties. Thus, we want to be able to model these nuances and details of transistor behavior in order to predict their effects on our circuits.
Transistor Models
Transistor models enable us to describe and predict the behavior of the circuits we build using these transistors by:
- Providing us with a window into the physical device characteristics (e.g. dimensions, material and device properties, etc.) and processes (e.g. drift/diffusion currents, tunneling, charge transfer, etc.), and
- Allowing us to perform easy to do "experiments" using simulators such as SPICE[1].
Levels of Abstraction
The complexity of transistor models can range from very simple models, such as modeling the transistor as a simple controlled switch, to very complex models such as BSIM[2] models with hundreds of parameters.
References
- ↑ SPICE (Simulation Program with Integrated Circuit Emphasis) https://en.wikipedia.org/wiki/SPICE
- ↑ BSIM ((Berkeley Short-channel IGFET Model)) https://bsim.berkeley.edu/
